View BLF242B_4983849.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

d a t a sh eet product speci?cation file under discrete semiconductors, sc08a september 1992 discrete semiconductors blf242 hf/vhf power mos transistor
september 1992 2 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 features high power gain low noise easy power control good thermal stability withstands full load mismatch gold metallization ensures excellent reliability. description silicon n-channel enhancement mode vertical d-mos transistor designed for professional transmitter applications in the hf/vhf frequency range. the transistor is encapsulated in a 4-lead, sot123 flange envelope, with a ceramic cap. all leads are isolated from the flange. pinning - sot123 pin description 1 drain 2 source 3 gate 4 source pin configuration caution the device is supplied in an antistatic package. the gate-source input must be protected against static charge during transport and handling. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. handbook, halfpage s d g mbb072 - 2 fig.1 simplified outline and symbol. f page 1 23 4 msb057 quick reference data rf performance at t h = 25 c in a common source test circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 175 28 5 > 13 typ. 16 > 50 typ. 60
september 1992 3 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 limiting values in accordance with the absolute maximum system (iec 134). thermal resistance symbol parameter conditions min. max. unit v ds drain-source voltage - 65 v v gs gate-source voltage - 20 v i d dc drain current - 1a p tot total power dissipation up to t mb = 25 c - 16 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter conditions thermal resistance r th j-mb thermal resistance from junction to mounting base t mb =25 c; p tot = 16 w 11 k/w r th mb-h thermal resistance from mounting base to heatsink t mb =25 c; p tot = 16 w 0.3 k/w fig.2 dc soar. (1) current is this area may be limited by r ds(on) . (2) t mb =25 c. handbook, halfpage mra918 10 - 2 10 - 1 10 1 1 10 i d (a) v ds (v) 10 2 (1) (2) fig.3 power/temperature derating curves. (1) continuous operation. (2) short-time operation during mismatch. handbook, halfpage 0 50 100 150 20 10 0 mpg141 (2) (1) p tot (w) t h ( c)
september 1992 4 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.1 ma 65 -- v i dss drain-source leakage current v gs = 0; v ds = 28 v -- 10 m a i gss gate-source leakage current v gs = 20 v; v ds = 0 -- 1 m a v gs(th) gate-source threshold voltage i d = 3 ma; v ds = 10 v 2 - 4.5 v g fs forward transconductance i d = 0.3 a; v ds = 10 v 0.16 0.24 - s r ds(on) drain-source on-state resistance i d = 0.3 a; v gs = 1 v - 3.3 5 w i dsx on-state drain current v gs = 10 v; v gs = 10 v - 1.2 - a c is input capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 13 - pf c os output capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 9.4 - pf c rs feedback capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 1.7 - pf fig.4 temperature coefficient of gate-source voltage as a function of drain current, typical values. v ds =10v. handbook, halfpage 0 100 200 300 4 2 ? ? 0 mbb777 i d (ma) t.c. (mv/k) fig.5 drain current as a function of gate-source voltage, typical values. v ds = 10 v; t j =25 c. handbook, halfpage 0 1.5 1 0.5 0 51015 mgp142 v gs (v) i d (a)
september 1992 5 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 fig.6 drain-source on-state resistance as a function of junction temperature, typical values. i d = 0.3 a; v gs =10v. handbook, halfpage 0 6 4 2 0 50 100 150 mbb778 t j ( o c) r ds (on) ( w ) fig.7 input and output capacitance as functions of drain-source voltage, typical values. v gs = 0; f = 1 mhz. handbook, halfpage 0 30 20 10 0 10 20 30 mbb776 v ds (v) c (pf) c is c os fig.8 feedback capacitance as a function of drain-source voltage, typical values. v gs = 0; f = 1 mhz. handbook, halfpage 0 6 4 2 0 10 20 30 mbb775 v ds (v) c rs (pf)
september 1992 6 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 application information for class-b operation t h = 25 c; r th mb-h = 0.3 k/w; unless otherwise speci?ed. rf performance in cw operation in a common source class-b test circuit. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) r gs ( w ) cw, class-b 175 28 10 5 > 13 typ. 16 > 50 typ. 60 47 ruggedness in class-b operation the blf242 is capable of withstanding a load mismatch corresponding to vswr = 50 through all phases under the following conditions: v ds = 28 v; f =175 mhz at rated output power. noise ?gure (see fig.11) v ds = 28 v; i d = 0.2 a; f = 175 mhz; r gs =47 w ; t h =25 c. input and output power matched for p l =5w; f = typ. 5.5 db. fig.9 power gain and efficiency as functions of load power, typical values. class-b operation; v ds = 28 v; i dq =10ma; r gs =47 w ; f = 175 mhz. handbook, halfpage 0510 20 0 10 100 0 50 mgp143 h d h d (%) g p p l (w) g p (db) fig.10 load power as a function of input power, typical values. class-b operation; v ds = 28 v; i dq =10ma; r gs =47 w ; f = 175 mhz. handbook, halfpage 0 0.5 1 10 0 5 mgp144 p l (w) p in (w)
september 1992 7 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 list of components (class-b test circuit) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. the striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric ( e r = 4.5), thickness 1 16 inch. component description value dimensions catalogue no. c1, c2, c7 ?lm dielectric trimmer 4 to 40 pf 2222 809 08002 c3 multilayer ceramic chip capacitor (note 1) 100 pf c4, c8 ceramic chip capacitor 100 nf 2222 852 47104 c6 ?lm dielectric trimmer 5 to 60 pf 2222 809 08003 c9 electrolytic capacitor 2.2 m f, 40 v l1 5 turns enamelled 0.7 mm copper wire 53 nh length 5.4 mm int. dia. 3 mm leads 2 5mm l2, l3 stripline (note 2) 30 w 10 6mm l4 11 turns enamelled 1 mm copper wire 500 nh length 15.5 mm int. dia. 8 mm leads 2 5mm l5 5 turns enamelled 1 mm copper wire 79 nh length 9.1 mm int. dia. 5 mm leads 2 5mm l6 grade 3b ferroxcube rf choke 4312 020 36640 r1 0.5 w metal ?lm resistor 47 w r2 0.5 w metal ?lm resistor 10 w fig.11 test circuit for class-b operation. f = 175 mhz. handbook, full pagewidth mgp145 input 50 w c1 c3 c3 l6 r2 l1 l2 d.u.t. l3 l5 + v g l4 r1 c2 c7 c8 c9 + v d c6 c5 output 50 w
september 1992 8 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 fig.12 component layout for 175 mhz class-b test circuit. the circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. earth connections are made by fixing screws, copper straps and hollow rivets at the edges of the board and under the source. dimensions in mm. handbook, full pagewidth mgp146 150 70 strap strap rivet c1 l1 r1 l2 l3 l4 l5 l6 r2 c2 c3 c4 c5 c8 c6 c7 c9 + v g + v d
september 1992 9 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 fig.13 input impedance as a function of frequency (series components), typical values. class-b operation; v ds = 28 v; p l =30w; r gs =47 w ;t h =25 c. handbook, halfpage 0 50 10 30 - 10 - 30 200 mgp150 100 r i x i z i ( w ) f (mhz) fig.14 load impedance as a function of frequency (series components), typical values. class-b operation; v ds = 28 v; p l =30w; r gs =47 w ;t h =25 c. handbook, halfpage 0 200 100 0 mgp149 50 100 z l ( w ) f (mhz) r l x l fig.15 power gain as a function of frequency, typical values. class-b operation; v ds = 28 v; p l =30w; r gs =47 w ;t h =25 c. handbook, halfpage 0 200 20 0 mgp148 10 100 g p (db) f (mhz)
september 1992 10 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 package outline references outline version european projection issue date iec jedec eiaj sot123a 97-06-28 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 4 leads sot123a 1 2 43 u 3 u 2 h h l b q d u 1 q a f c p m w 2 b c c a w 1 m ab a unit a mm d b 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c d 1 u 2 u 3 9.78 9.39 1.02 0.51 w 2 w 1 45 a l 5.61 5.16 u 1 25.15 24.38 q 4.63 4.11 q 18.42 f 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.04 0.02 0.221 0.203 0.99 0.96 0.182 0.162 0.725 0.107 0.091 p h dimensions (millimetre dimensions are derived from the original inch dimensions)
september 1992 11 philips semiconductors product speci?cation hf/vhf power mos transistor blf242 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

▲Up To Search▲

Price & Availability of BLF242B

	To Download BLF242B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .